Graduate Student Seminar
February 14, 2025
10:00 a.m. ET
McConomy Auditorium, First Floor Cohon University Center
February 14, 2025
10:00 a.m. ET
McConomy Auditorium, First Floor Cohon University Center
Integrating dissimilar semiconductors on a single crystal platform can power the next generation of electronics and photonics applications. In such a platform, semiconductors like III-V and IV-VI materials bring exciting new properties to the table and leverage the scale and functionality of conventional silicon technology. The synthesis of high-quality semiconductor thin films while mediating this dissimilarity, however, is quite the materials science challenge. These very differences in properties also lead to unusual interfaces and crystal defects such as dislocations that severely degrade device performance. In this talk, we update our understanding of how dislocations are bad for epitaxially integrated telecom lasers on silicon using new microscopy and microanalysis tools, and we present on our progress in engineering dislocation tolerance in such devices using MBE-grown III-V (InAs) quantum dots. With an eye towards materials and devices naturally more tolerant to dislocations, we will show new opportunities that arise from MBE-grown IV-VI (PbSe-SnSe) mid-infrared light emitters and crystalline-crystalline phase change materials grown epitaxially on III-V substrates.
Mukherjee's research interests are in compound semiconductor thin film synthesis and defect science. Prof. Mukherjee received his B.Eng. in Electrical Engineering from Nanyang Technological University in Singapore, M.S. from the National University of Singapore, and his M.Eng. and Ph.D. from MIT in Materials Science and Engineering. Before joining Stanford, he has been an assistant professor in the Materials department at UC Santa Barbara (2016-2020) and has held postdoctoral appointments at IBM and MIT. His work on epitaxy and crystal defects has been recognized by a NSF CAREER award, the Corbett Prize at the International Conference on Defects in Semiconductors, the Young Scientist Award of the 2023 International Symposium on Compound Semiconductors, and the Young Investigator Award at the 2024 North American Molecular Beam Epitaxy conference.
February 21 2025
10:00 AM ET
Materials Science and Engineering
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McConomy Auditorium, First Floor Cohon University Center
February 28 2025
10:00 AM ET
Materials Science and Engineering
Extreme mechanics and manufacturing of materials across scales, presented by Yu Zou, University of Toronto
McConomy Auditorium, First Floor Cohon University Center
March 14 2025
10:00 AM ET
Materials Science and Engineering
A Journey from Atoms to Materials: Computationally-Guided Discovery and Design of Functional Materials, presented by Prashun Gorai, Colorado School of Mines
McConomy Auditorium, First Floor Cohon University Center
March 21 2025
10:00 AM ET
Materials Science and Engineering
Thermophysical and Thermochemical Properties of Transition Metal Diborides up to and above 3000 degrees, presented by Scott J. McCormack, University of California, Davis
McConomy Auditorium, First Floor Cohon University Center
March 28 2025
10:00 AM ET
Materials Science and Engineering
Deciphering microscopic mechanisms driving assembly and flow of soft materials, presented by Vikram Jadhao, Indiana University, Bloomington
McConomy Auditorium, First Floor Cohon University Center
April 11 2025
10:00 AM ET
Materials Science and Engineering
The Green Steel Revolution, presented by Sara Hornby-Anderson
McConomy Auditorium, First Floor Cohon University Center